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HiPerFASTTM IGBT
with Diode
C2-Class High Speed IGBTs
IXGH40N60C2D1 IXGT40N60C2D1 IXGJ40N60C2D1
VCES IC25
= = VCE(SAT) tfi(typ) =
TO-247(IXGH)
600V 75A 2.7V 32ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 25C, 1 ms VGE = 15V, TVJ = 125C, RG = 10 Clamped inductive load @ VCE 600V TC = 25C
Maximum Ratings 600 600 20 30 75 40 200 ICM = 80 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C C C Nm/lb.in N/lb g g
G C E C (TAB) G E C (TAB) G C E C (TAB)
TO-268 (D3) ( IXGT)
TO-268 Leaded ( IXGJ)
Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Mounting torque (IXGH) Mounting force (IXGJ) TO-247 TO-268 types
300 260 1.13/10 20..120/4.5..27 6 5
G = Gate E = Emitter
C = Collector
Features Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density Very fast switching speeds for high frequency applications High power surface mountable packages
DS99041E(01/08)
Symbol
Test Conditions
Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 3.0 TJ = 125C 5.0 200 3 100 TJ = 125C 2.2 1.7 2.7 V A mA nA V V
VGE(th) ICES IGES VCE(sat)
IC
= 250A, VCE = VGE
VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 30A, VGE = 15V, Note 1
(c) 2008 IXYS CORPORATION, All rights reserved
IXGH40N60C2D1 IXGT40N60C2D1 IXGJ40N60C2D1
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Inductive load, TJ = 125C IC = 30A, VGE = 15V VCE = 400V, RG = 3 Inductive load, TJ = 125C IC = 30A, VGE = 15V VCE = 400V, RG = 3 IC = 30A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1 MHz IC = 30A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 20 36 2500 220 54 95 14 36 18 20 90 32 0.20 18 20 0.6 130 80 0.50 240 0.37 140 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.42 C/W C/W
e
1 2 3
TO-247 (IXGH) Outline
P
Terminals: 1 - Gate 3 - Source
2 - Drain Tab - Drain
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
(IXGH, IXGJ)
0.25
TO-268 Leaded Outline
Reverse Diode (FRED) Symbol VF IRM trr RthJC Test Conditions IF = 30A, VGE = 0V, Pulse test
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. TJ =150C 1.6 2.5 4 100 25 V V A ns ns
IF = 30A, VGE = 0V, -diF/dt =100A/s, TJ = 100C VR = 100V TJ = 100C IF = 1A, -di/dt = 100A/s, VR = 30V
0.9 C/W
Note 1: Pulse test, t 300s; duty cycle, d 2 %. TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGH40N60C2D1 IXGT40N60C2D1 IXGJ40N60C2D1
Fig. 1. Output Characteristics @ 25 Deg. C
60 VG E = 15V 13V 11V 9V 1 80 1 50 21 0 VG E = 15V 13V 11V 9V
Fig. 2. Extended Output Characteristics @ 25 deg. C
50 40
I C - Amperes
7V
30
I C - Amperes
1 20 90
20 1 0
7V
60 30
5V
0 0.5 1 1 .5 2 2.5 3 3.5
5V
0
0
1
2
3
4
5
6
7
V C E - Volts
V C E - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
60 VG E = 15V 13V 11V 9V 1 .2 1 .3
Fig. 4. Temperature Dependence of V CE(sat)
50 40
I C = 60A VG E = 15V
VC E (sat) - Normalized
1 .1 1 0.9 0.8 0.7 0.6
I C - Amperes
7V
30
I C = 30A
20 1 0
5V
I C = 15A
0 0.5 1 1 .5 2 2.5 3
25
50
75
1 00
1 25
1 50
V CE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage
4 T J = 25 C 3.5 21 0 1 80 1 50 1 20 90 60 30 0 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 4
Fig. 6. Input Admittance
2.5
I C = 60A
2 30A 1 .5 15A 1
I C - Amperes
VC E - Volts
3
T J = 125 C 25 C -40 C
5
6
7
8
9
1 0
V G E - Volts
(c) 2008 IXYS CORPORATION, All rights reserved
V G E - Volts
IXGH40N60C2D1 IXGT40N60C2D1 IXGJ40N60C2D1
Fig. 7. Transconductance
70 60 50 40 30 20 1 0 0 0 30 60 90 1 20 1 50 1 80 T J = -40 C 25 C 125 C
Fig. 8. Dependence of Eoff on RG
1 .8 1 .6 1 .4 TJ = 125 C VG E = 15V VC E = 400V I C = 60A
E off - milliJoules
g f s - Siemens
1 .2 1 0.8 0.6 0.4 0.2 0 2
I C = 45A
I C = 30A
I C = 15A 4 6 8 1 0 1 2 1 4 1 6
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Eoff on IC
1 .6 1 .4 R G = 3 Ohms R G= 10 Ohms - - - - VG E = 15V VC E = 400V 1 .6 1 .4 1 .2
Fig. 10. Dependence of Eoff on Temperature
R G = 3 Ohms R G = 10 Ohms - - - - VG E = 15V VC E = 400V I C = 60A
E off - MilliJoules
1 .2 1 0.8
E off - milliJoules
1 0.8 0.6 0.4 I C = 30A I C = 15A 0 I C = 45A
T J = 125C 0.6 0.4 0.2 0 1 0 20 30 40 50 60 T J = 25C
0.2
25
50
75
1 00
1 25
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Gate Charge
1 5 VC E = 300V I C = 30A I G = 10mA 1 0000
Fig. 12. Capacitance
f = 1M Hz
1 2
Capacitance - p F
C ies 1 000
VG E - Volts
9
6
C oes 1 00
3 C res 0 0 20 40 60 80 1 00 1 0 0 5 1 0 1 5 20 25 30 35 40
IXYS reserves the right to change limits, test conditions, and dimensions.
Q G - nanoCoulombs
V C E - Volts
IXGH40N60C2D1 IXGT40N60C2D1 IXGJ40N60C2D1
Fig. 13. Maximum Transient Thermal Impedance
1 .00
Z(th) J C - (C/W)
0.1 0
0.01 0.0001
0.001
0.01
0.1
1
1 0
Pulse Width - Seconds
(c) 2008 IXYS CORPORATION, All rights reserved
IXGH40N60C2D1 IXGT40N60C2D1 IXGJ40N60C2D1
60 A 50 IF 40 1000 nC 800 Qr
TVJ= 100C VR = 300V
IRM
30 A 25 20 15 10
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
TVJ=150C
30 20
600
TVJ=100C
400
IF= 60A IF= 30A IF= 15A
TVJ=25C
10 0
200
5 0
0
1
2 VF
3V
0 100
A/s 1000 -diF/dt
0
200
400
600 A/s 1000 800 -diF/dt
Fig. 14. Forward current IF versus VF
2.0
Fig. 15. Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 16. Peak reverse current IRM versus -diF/dt
20 V V FR 15
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
TVJ= 100C IF = 30A tfr VFR
1.00 tfr 0.75 s
1.5 Kf 1.0
trr 80
IRM Qr
70
10
0.50
0.5
5
0.25
0.0
0
40
80
120 C 160 T VJ
60
0
200
400
600 -diF/dt
800 A/s
1000
0
0
200
400
0.00 600 A/s 1000 800 diF/dt
Fig. 17. Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 18. Recovery time trr versus -diF/dt
Fig. 19. Peak forward voltage VFR and tfr versus diF/dt
Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162
0.1 Z thJC
1 2 3
0.01
0.001 0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1
t
s
1
Fig. 20. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.

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